Researchers have discovered a new way to manufacture RRAM chips which could pave the way for easier fabrication.
MIT Technology Review has reported on the future of data storage following research performed at Rice University, Texas. They have been developing a new way of manufacturing how resistive random access memory (RRAM) is fabricated.
In order to create RRAM high temperatures and voltages are needed, but the researchers at Rice University have discovered a way to make RRAM at room temperature, and with much lower voltages than normally required.
RRAM works differently to your regular flash memory that’s in your mobile devices - instead of using charge in transistors, it uses resistance, meaning it requires less space to store its bits of information, which in turn means more data can be stored. Layers of RRAM should be easier stacked too, meaning info can be more densely stored on a single chip - some prototypes have allowed for a terabyte chip the size of a postage stamp to be fabricated.
Crossbar, the company which created the postage stamp-sized prototype, expects production of their RRAM chips to begin as early as 2015. Samsung’s versions of the RRAM are using multiple layers, with one type having ‘as many as 24 layers’.
So if you think about the flash memory in your smartphone now, it’ll have a maximum of 128GB no doubt – think about having the ability to store 10 times that or more. Of course the technology will no doubt be put into other devices, not just smartphones, so we could be seeing computers and tablets with more storage capacity than we ever thought imaginable at this time.